Title :
32-GHz cryogenically cooled HEMT low-noise amplifiers
Author :
Duh, K. H George ; Kopp, William F. ; Ho, Pin ; Chao, Pane-Chane ; Ko, Ming-Yih ; Smith, Phillip M. ; Ballingall, James M. ; Bautista, J. Javier ; Ortiz, Gerardo G.
Author_Institution :
Gen. Electr. Electron. Lab., Syracuse, NY, USA
fDate :
8/1/1989 12:00:00 AM
Abstract :
The cryogenic noise temperature performances of a two-stage and a three-stage 32-GHz HEMT (high-electron-mobility transistor) amplifier were evaluated. The amplifiers utilize quarter-micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable DC biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of ten in cooling from 300 to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while for the three-stage amplifier it was 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; low-temperature techniques; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; 0.25 micron; 12 to 300 K; 16.5 dB; 26 dB; 32 GHz; AlGaAs-GaAs; HEMT low-noise amplifiers; broadband response; cryogenic noise temperature performances; cryogenically stable DC biasing network; gain; microstrip circuits; three-stage amplifier; two-stage amplifier; Broadband amplifiers; Circuit noise; Frequency measurement; Gain measurement; HEMTs; Low-noise amplifiers; Noise measurement; Performance evaluation; Temperature distribution; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
