DocumentCode
1139419
Title
Thermal effects in p-channel MOSFETs at low temperatures
Author
Foty, Daniel
Author_Institution
IBM Corp., Essex Junction, VT, USA
Volume
36
Issue
8
fYear
1989
fDate
8/1/1989 12:00:00 AM
Firstpage
1542
Lastpage
1544
Abstract
Thermal effects due to device self-heating in p-channel enhancement MOSFETs operated at cryogenic temperatures are discussed. Device heating is observed through drain-current transients, and the drain current is used to monitor heating. Comparisons are made with earlier results for n-channel devices. Some implications for low-temperature CMOS operation are considered
Keywords
insulated gate field effect transistors; low-temperature techniques; semiconductor device testing; transients; cryogenic temperatures; drain-current transients; low-temperature CMOS operation; p-channel enhancement MOSFETs; self-heating; Cryogenics; Current measurement; Heating; Hysteresis; MOSFETs; Monitoring; Neodymium; Plastic packaging; Semiconductor devices; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.30968
Filename
30968
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