Title :
A Case Study of Problems in JEDEC HBM ESD Test Standard
Author :
Huo, Mingxu ; Guo, Qing ; Han, Yan ; Shen, Lei ; Liu, Qi ; Song, Bo ; Ma, Qingrong ; Zhu, Kehan ; Shen, Yehui ; Du, Xiaoyang ; Dong, Shurong
Author_Institution :
Zhejiang Univ., Hangzhou, China
Abstract :
There is a current need for modification of EIA/JEDEC Human-Body model (HBM) electrostatic discharge (ESD) test standard, which does not define start and step test voltages. In the current standard, some measurements start at several kilovolts, which ignore the fact that ESD protection devices may fail under low voltage stresses. In this paper, a grounded-gate structure with an n-well ballast resistor connecting its drain and PAD is investigated for HBM ESD sustaining levels. When tested with a Zapmaster starting from 1 kV, the withstand voltage exceeds 8 kV, whereas the structure failed at 350 V when the test starts from 50 V. The test results from a transmission-line-pulsing system validate the phenomenon. The reason for the failure is also studied and confirmed with optical-beam-induced resistor change system failure analysis results. To address this general issue, a suggestion for improving the present HBM ESD testing standards for industry applications is made.
Keywords :
MOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; standards; JEDEC HBM ESD test standard; electrostatic discharge; failure analysis; grounded-gate structure; human-body model; optical-beam-induced resistor change system; transmission-line-pulsing system; voltage 1 kV; voltage 350 V; Electrostatic discharge (ESD); Human-Body model (HBM); JEDEC test standard;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2009.2027124