Title :
Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls
Author :
Kuo, C.W. ; Lee, Y.C. ; Fu, Y.K. ; Tsai, C.H. ; Wu, M.L. ; Chi, G.C. ; Kuo, C.H. ; Tun, C.J.
Author_Institution :
Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli, Taiwan
Abstract :
In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.
Keywords :
III-V semiconductors; etching; gallium compounds; light emitting diodes; optical fabrication; wide band gap semiconductors; GaN; LED fabrication; chemical etching; chip edge; current 20 mA; injection current; inverted pyramid sidewall; light-extraction efficiency; nitride-based LED; optical simulation; power 7.07 mW; power 8.95 mW; voltage 3.69 V; voltage 3.75 V; Inverted pyramid sidewalls (IPSs); LED; simulation; wet etching;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2009.2015335
