DocumentCode :
1139595
Title :
Degradation Study of Organic Semiconductor Devices Under Electrical and Optical Stresses
Author :
Jassi, Munish ; Gurunath, R. ; Iyer, S. Sundar Kumar
Author_Institution :
Magma Design Autom. India Pvt. Ltd., Bangalore
Volume :
29
Issue :
5
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
442
Lastpage :
444
Abstract :
Degradation due to electrical and optical stresses on organic semiconductor devices fabricated with imidazolin-5-one as an active layer is studied in this letter. It is found that while both electrical and optical stresses degrade device performance, the former leads to much faster degradation as compared with the latter. It is found that in electrical-stress degradation, the drop in current is a strong function of the charge flowing through the device during stress (charge fluence). For optical-stress degradation, it is strongly dependent on the duration of stress. It is also found that the input electrical and light energy during the stress may be annealing out some of the defects in the device and, hence, mitigating the degradation due to the applied stress.
Keywords :
annealing; organic semiconductors; semiconductor device packaging; semiconductor devices; active layer; annealing; electrical stresses; imidazolin-5-one; optical stresses; organic semiconductor devices; Electron optics; Indium tin oxide; Optical devices; Optical sensors; Organic light emitting diodes; Organic semiconductors; Space technology; Stress; Thermal degradation; Voltage; Annealing; charge fluence; degradation; electrical and optical stresses; imidazolin-5-one; semiconductor device fabrication;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.920978
Filename :
4494622
Link To Document :
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