P-Channel Tri-Gate FinFETs Featuring $\hbox {Ni}_{1 - y}\hbox {Pt}_{y} \hbox {SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

We report the integration of nickel platinum germanosilicide (Ni_1-yPt_ySiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni_1-yPt_ySiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni_1-yPt_ySiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (Phi_P ^B) among the candidates evaluated. The low Phi_P ^B(0.309 eV) provides a 15% reduction in series resistance R_series. With a superior morphological stability and reduced R_series, FinFETs integrated with contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.