Investigation of Bulk Traps Enhanced Gate-Induced Leakage Current in Hf-Based MOSFETs

Author

Liao, J.C. ; Fang, Yean-Kuen ; Hou, Y.T. ; Tseng, W.H. ; Hsu, P.F. ; Lin, K.C. ; Huang, K.T. ; Lee, T.L. ; Liang, M.S.

Author_Institution

Nat. Cheng Kung Univ., Tainan

Volume

29

Issue

5

fYear

2008

fDate

5/1/2008 12:00:00 AM

Firstpage

509

Lastpage

511

Abstract

A comprehensive study on bulk trap enhanced gate-induced drain leakage (BTE-GIDL) currents in high-MOSFETs is reported in this letter. The dependence of GIDL for various parameters, including the effect of Zr concentration in , high-film thickness, and electrical stress is investigated. The incorporation of Zr into reduces GIDL. GIDL was also found to reduce with thinner high-film. In addition, a significant correlation between GIDL and bulk trap density in high- film is established. Possible mechanisms were provided to explain the role of bulk trapping in BTE-GIDL, observed in high-devices.

Keywords

MOSFET; leakage currents; MOSFET; bulk traps; electrical stress; gate-induced leakage current; CMOS technology; Charge pumps; Current measurement; Dielectric measurements; Dielectric substrates; Hafnium oxide; Leakage current; MOSFETs; Voltage; Zirconium; Bulk traps enhanced gate-induced leakage (BTE-GIDL); Hf-based MOSFETs; gate-induced drain leakage (GIDL); trap-assisted tunneling (TAT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.920286

Filename

4494626