Title :
Saturation characteristics of Ga0.68In0.32As/GaInAsP/InP tensile-strained quantum-well semiconductor laser amplifiers with tapered-waveguide structures
Author :
Huang, Yidong ; Komori, Kazuhiro ; Kudo, Koji ; Arai, Shigehisa
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
9/1/1994 12:00:00 AM
Abstract :
With an aim toward a high-saturation power operation, a tapered-waveguide traveling-wave semiconductor laser amplifier (SLA) with a Ga0.68In0.32As/GaInAsP/InP tensile-strained quantum-well (QW) structure was investigated and realized for the first time. In spite of the high differential gain in the tensile-strained QW active layer, a high-saturation-output power of 18.5 dB (1 mW) (71 mW) and a high-maximum-output power of 20.4 dB(1 mW) (110 mW) were obtained with a narrow single-lobed beam-divergence property. These results indicate that the saturation performances of SLA´s with tensile-strained active layers can be improved by the tapered-waveguide structures
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; internal stresses; optical waveguides; semiconductor lasers; 110 mW; 71 mW; Ga0.68In0.32-GaInAsP-InP; Ga0.68In0.32As/GaInAsP/InP tensile-strained quantum-well semiconductor laser amplifiers; Ga0.68In0.32As/GaInAsP/InP tensile-strained quantum-well structure; differential gain; high-maximum-output power; high-saturation power operation; high-saturation-output power; narrow single-lobed beam-divergence property; saturation performances; tapered-waveguide structures; tapered-waveguide traveling-wave semiconductor laser amplifier; High power amplifiers; Indium phosphide; Optical noise; Optical saturation; Power lasers; Quantum well lasers; Quantum wells; Semiconductor lasers; Semiconductor optical amplifiers; Tensile strain;
Journal_Title :
Quantum Electronics, IEEE Journal of
