Title :
Performance comparison on D.C properties of heterostructure DDR IMPATT with conventional diode
Author :
Deyasi, Arpan ; Mukherjee, Kingshuk ; Bhattacharyya, Souvik
Author_Institution :
Dept. of Electron. & Comm. Eng., RCC Inst. of Inf. Technol., Kolkata, India
Abstract :
In this paper, electric field profile, normalized current density, breakdown voltage and conversion efficiency of Si/Si0.9Ge0.1 DDR IMPATT are numerically computed and results are compared with Si DDR diode for optimized input bias current. Double iterative technique is used for computational purpose which is based on simultaneous numerical solution of Poisson´s equation, carrier diffusion equation and continuity equation in addition with the effect of mobile space charge. Electric field and normalized current profiles are obtained subject to the appropriate boundary conditions. Breakdown voltage and conversion efficiency are calculated for optimized input bias current density. Doping concentration is so chosen to obtain punch-through effect. Results are useful for small-signal analysis at microwave and millimeterwave frequency range.
Keywords :
IMPATT diodes; iterative methods; Poisson equation; breakdown voltage; carrier diffusion equation; continuity equation; conventional diode; conversion efficiency; doping concentration; double iterative technique; electric field profile; heterostructure DDR IMPATT; input bias current density; microwave frequency range; millimeterwave frequency range; mobile space charge; normalized current density; normalized current profiles; small signal analysis; Electric breakdown; Equations; Mathematical model; Microwave propagation; Performance evaluation; Radar; Silicon; Double drift region; Double iterative method; Heterostructure IMPATT; Multiplication factor;
Conference_Titel :
Electronics, Communication and Instrumentation (ICECI), 2014 International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4799-3982-4
DOI :
10.1109/ICECI.2014.6767375
