DocumentCode :
1139705
Title :
Relaxation oscillations in quasi-single-mode semiconductor lasers
Author :
Zaibel, R. ; Chernobrod, B.M. ; Prior, Yehiam
Author_Institution :
Dept. of Chem. Phys., Weizmann Inst. of Sci., Rehovot, Israel
Volume :
30
Issue :
9
fYear :
1994
fDate :
9/1/1994 12:00:00 AM
Firstpage :
2081
Lastpage :
2086
Abstract :
The intensity-relaxation-oscillation (RO) and damping rates, and the laser linewidth are measured and analyzed for a semiconductor laser under quasi-single-mode conditions. The RO frequency and the laser-linewidth dependence on laser power are measured, and are described well by the Henry single-mode theory. The relaxation-oscillation damping rate, however, shows a significant deviation from the expected power dependence, and is found to depend on the effective number of idle modes, and the fraction of energy in such modes. The observation is explained very well by a generalized quasi-single-mode theory that accounts for the collective contribution of the idle modes
Keywords :
damping; laser modes; laser theory; semiconductor lasers; spectral line breadth; Henry single-mode theory; damping rates; idle modes; intensity-relaxation-oscillation; laser linewidth; quasi-single-mode theory; semiconductor lasers; Damping; Frequency measurement; Laser modes; Laser noise; Laser theory; Noise measurement; Power lasers; Power measurement; Semiconductor device noise; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.309868
Filename :
309868
Link To Document :
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