Analysis of an InGaAsP/InP twin-overlayed-waveguide switch

Author

Maciejko, R. ; Champagne, A. ; Reid, B. ; Mani, H.

Author_Institution

Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada

Volume

30

Issue

9

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

2106

Lastpage

2113

Abstract

This paper examines the design considerations for a device combining vertical stacking of waveguides, carrier injection, and codirectional switching in InGaAsP/InP materials and demonstrates that many favorable features can be found in such a device, namely, an interaction length of about 408 μm, switching with about 1 V with an injection current density of the order of 108-988 A/cm² and a channel isolation up to 25 db with an absorption loss of under 1 dB. We base our argument on a self-consistent numerical calculation

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical losses; optical switches; optical waveguides; 1 V; 1 dB; 400 micron; InGaAsP-InP; InGaAsP/InP twin-overlayed-waveguide switch; absorption loss; carrier injection; channel isolation; codirectional switching; design; injection current density; interaction length; self-consistent numerical calculation; vertical stacking; Absorption; Current density; Epitaxial layers; Geometrical optics; Indium phosphide; Optical materials; Optical refraction; Optical waveguides; Stacking; Switches;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.309870

Filename

309870