Title : 
A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation
         
        
            Author : 
Chen, Wei-Hung ; Liu, Gang ; Zdravko, Boos ; Niknejad, Ali M.
         
        
            Author_Institution : 
Univ. of California, Berkeley
         
        
        
        
        
            fDate : 
5/1/2008 12:00:00 AM
         
        
        
        
            Abstract : 
A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 m CMOS technology, this LNA achieved 16 dBm in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1GHz while drawing 11.6 mA from 1.5 V supply voltage.
         
        
            Keywords : 
CMOS integrated circuits; distortion; interference suppression; low noise amplifiers; wideband amplifiers; CMOS LNA; broadband inductorless low-noise amplifier; cascade amplifiers; distortion cancellation; distortion-free circuit; noise cancellation; Broadband amplifiers; CMOS technology; Linearity; Low-noise amplifiers; MOSFETs; Narrowband; Noise cancellation; Noise figure; Semiconductor device noise; Voltage; Broadband LNA; distortion cancellation; noise cancellation; volterra series analysis;
         
        
        
            Journal_Title : 
Solid-State Circuits, IEEE Journal of
         
        
        
        
        
            DOI : 
10.1109/JSSC.2008.920335