• DocumentCode
    1139802
  • Title

    A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation

  • Author

    Chen, Wei-Hung ; Liu, Gang ; Zdravko, Boos ; Niknejad, Ali M.

  • Author_Institution
    Univ. of California, Berkeley
  • Volume
    43
  • Issue
    5
  • fYear
    2008
  • fDate
    5/1/2008 12:00:00 AM
  • Firstpage
    1164
  • Lastpage
    1176
  • Abstract
    A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 m CMOS technology, this LNA achieved 16 dBm in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1GHz while drawing 11.6 mA from 1.5 V supply voltage.
  • Keywords
    CMOS integrated circuits; distortion; interference suppression; low noise amplifiers; wideband amplifiers; CMOS LNA; broadband inductorless low-noise amplifier; cascade amplifiers; distortion cancellation; distortion-free circuit; noise cancellation; Broadband amplifiers; CMOS technology; Linearity; Low-noise amplifiers; MOSFETs; Narrowband; Noise cancellation; Noise figure; Semiconductor device noise; Voltage; Broadband LNA; distortion cancellation; noise cancellation; volterra series analysis;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2008.920335
  • Filename
    4494645