Title :
Influence of electron energy on the characteristics of electron-beam-pumped semiconductor lasers
Author :
Bogdankevich, O.V. ; Kalendin, V.V. ; Mestvirishvili, A.N.
Author_Institution :
Lebedev Physical Institute, Moscow, USSR
fDate :
6/1/1970 12:00:00 AM
Abstract :
The influence of electron energy on the characteristics of electron-beam-pumped GaAs lasers is studied experimentally. Increases in the electron energy lead to increases in output power and decreases in beam divergence. Above radiation-damage threshold, a degradation of the laser output with time is observed due to bulk defects created by the beam. These defects are partially self-annealing if radiation is stopped.
Keywords :
Electron beams; Energy measurement; Fingers; Gallium arsenide; Heating; Laser beams; Mirrors; Pulse measurements; Pump lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1970.1076465
