• DocumentCode
    1139874
  • Title

    Resolution of sidebands in a semiconductor laser frequency modulated by ultrasonic waves

  • Author

    Whitney, Colin G. ; Pratt, George W., Jr.

  • Author_Institution
    NASA Elec. Res. Center, Cambridge, MA, USA
  • Volume
    6
  • Issue
    6
  • fYear
    1970
  • fDate
    6/1/1970 12:00:00 AM
  • Firstpage
    352
  • Lastpage
    355
  • Abstract
    Frequency modulatlon or a semiconductor laser via ultrasonic waves is achieved at a modulating frequency \\omega _{m} - 150 MHz for CW operation at 4.2°K. Individual sidebands are resolved whose variation with pressure agree well with theory, indicating that little distortion is present. A modulation index of 6 is achieved corresponding to a frequency deviation of 900 MHz and an acoustic pressure of 3 atmospheres. Under pulsed operation at 4.2°K and 77°K frequency modulation is observed as a blurring of the laser frequency.
  • Keywords
    Cities and towns; Dielectric constant; Frequency modulation; Gallium arsenide; Laser modes; Laser noise; Laser theory; Optical pulses; Quantum well lasers; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1970.1076470
  • Filename
    1076470