DocumentCode
1139874
Title
Resolution of sidebands in a semiconductor laser frequency modulated by ultrasonic waves
Author
Whitney, Colin G. ; Pratt, George W., Jr.
Author_Institution
NASA Elec. Res. Center, Cambridge, MA, USA
Volume
6
Issue
6
fYear
1970
fDate
6/1/1970 12:00:00 AM
Firstpage
352
Lastpage
355
Abstract
Frequency modulatlon or a semiconductor laser via ultrasonic waves is achieved at a modulating frequency
MHz for CW operation at 4.2°K. Individual sidebands are resolved whose variation with pressure agree well with theory, indicating that little distortion is present. A modulation index of 6 is achieved corresponding to a frequency deviation of 900 MHz and an acoustic pressure of 3 atmospheres. Under pulsed operation at 4.2°K and 77°K frequency modulation is observed as a blurring of the laser frequency.
MHz for CW operation at 4.2°K. Individual sidebands are resolved whose variation with pressure agree well with theory, indicating that little distortion is present. A modulation index of 6 is achieved corresponding to a frequency deviation of 900 MHz and an acoustic pressure of 3 atmospheres. Under pulsed operation at 4.2°K and 77°K frequency modulation is observed as a blurring of the laser frequency.Keywords
Cities and towns; Dielectric constant; Frequency modulation; Gallium arsenide; Laser modes; Laser noise; Laser theory; Optical pulses; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1970.1076470
Filename
1076470
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