DocumentCode :
1139901
Title :
A 3 \\mu W CMOS True Random Number Generator With Adaptive Floating-Gate Offset Cancellation
Author :
Holleman, Jeremy ; Bridges, Seth ; Otis, Brian P. ; Diorio, Chris
Author_Institution :
Univ. of Washington, Seattle
Volume :
43
Issue :
5
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
1324
Lastpage :
1336
Abstract :
This paper presents two novel hardware random number generators (RNGs) based on latch metastability. We designed the first, the DC-nulling RNG, for extremely low power operation. The second, the FIR-based RNG, uses a predictive whitening filter to remove nonrandom components from the generated bit sequence. In both designs, the use of floating-gate memory cells allows us to predict and compensate for DC offsets and other nonrandom influences while minimizing power consumption. We also present an efficient digital post-processing technique for improving randomness. We fabricated both RNGs in a standard 0.35 mum CMOS process. The DC-nulling RNG occupied .031 mm2 of die area, while the FIR-based RNG occupied 1.49 mm2.
Keywords :
CMOS integrated circuits; FIR filters; floating point arithmetic; random number generation; CMOS process; CMOS true random number generator; DC-nulling RNG; FIR-based RNG; adaptive floating-gate offset cancellation; floating-gate memory cells; generated bit sequence; hardware random number generators; latch metastability; predictive whitening filter; Cryptography; Energy consumption; Entropy; Filters; Noise generators; Nonvolatile memory; Nuclear power generation; Radiofrequency identification; Random number generation; Wireless sensor networks; Cryptography; floating gates; noise; random number generator (RNG); wireless sensor networks;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2008.920327
Filename :
4494657
Link To Document :
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