Title :
Dual InGaAs Photodiodes Having High Phase Linearity for Precise Timing Applications
Author :
Joshi, Abhay ; Datta, Shubhashish
Author_Institution :
Discovery Semicond., Ewing, NJ, USA
Abstract :
We report highly linear InGaAs p-i-n dual photodiodes having a power-to-phase conversion factor of < 3.2 rad/W up to 1.5-V peak radio-frequency amplitude. These matched photodiodes, each having a 3-dB bandwidth of 22 GHz, demonstrate nearly identical performance leading to a differential power-to-phase conversion factor of < 1.5 rad/W.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-i-n photodiodes; InGaAs; bandwidth 22 GHz; high phase linearity; p-i-n dual photodiodes; power-to-phase conversion factor; precise timing; radio-frequency amplitude; Nonlinearities; phase noise; photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2026632
