Title :
Temperature dependence of single-event transient current induced by heavy-ion microbeam on p+/n/n+ epilayer junctions
Author :
Guo, Gang ; Hirao, Toshio ; Laird, Jamie Stuart ; Onoda, Shinobu ; Wakasa, Takeshi ; Yamakawa, Takeshi ; Kamiya, Tomihiro
Author_Institution :
Dept. of Nucl. Phys., China Inst. of Atomic Energy, Beijing, China
Abstract :
The temperature dependence of the single event transient current induced by using 15-MeV oxygen heavy-ion microbeam strike on p+/n/n+ epilayer junction diodes has been experimentally investigated over a temperature range of approximately 290 to 450 K. It was found that the heavy-ion induced single event transient currents show different behavior for different temperatures while the collected charges almost keep constant over the temperature range considered.
Keywords :
ion beam effects; p-n heterojunctions; semiconductor diodes; transients; 290 to 450 K; charge collection; diffused charge; oxygen heavy-ion microbeam; p+/n/n+ epilayer junctions; pn junction diode; single-event transient; temperature dependence; transient currents; Circuits; Diodes; Plasma temperature; Power system transients; Random access memory; Shape; Space vehicles; Temperature dependence; Temperature distribution; Temperature sensors; Charge collection; diffused charge; pn junction diode; single-event transient; temperature dependence;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.835058
