DocumentCode
1139990
Title
Characteristics of bistable CW GaAs junction lasers operating above the delay-transition temperature
Author
Ripper, José E. ; Paoli, Thomas L. ; Dyment, John C.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, NJ, USA
Volume
6
Issue
6
fYear
1970
fDate
6/1/1970 12:00:00 AM
Firstpage
300
Lastpage
304
Abstract
The conditions for bistable operation of CW GaAs junction lasers are developed in terms of the previously published double-acceptor trap theory. The experimental CW operation of such devices is shown to agree well with the theoretical results. In addition the fabrication of these bistable lasers is described and several pulsed experiments are reported that indicate a significant increase in the number of trapping centers in the vicinity of the junction.
Keywords
Delay effects; Electrons; Gallium arsenide; Laser theory; Optical bistability; Optical losses; Optical saturation; Quantum well lasers; Semiconductor lasers; Temperature;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1970.1076481
Filename
1076481
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