Dynamic calibration of low-range silicon pressure sensors

Author

Zakrzewski, Jan ; Wróbel, Krzysztof

Author_Institution

Silesian Univ. of Technol., Gliwice, Poland

Volume

51

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

1358

Lastpage

1362

Abstract

Two methods of dynamic calibration of low-pressure piezoresistive sensors are presented and related to each other. The first method consists of the generation of standing waves in a tube of the length corresponding to the wave frequency. The change of the wave frequency allows one to obtain (step by step) the whole frequency response of the sensor. The second method consists of the recording of the down-step time response of the sensor. The main difficulty of the second method lies in obtaining the proper shape of the pressure drop. It has been found that the inlet tube length is essential in obtaining successful results. Comparison of both methods shows satisfactory agreement of the calibration results.

Keywords

calibration; elemental semiconductors; frequency response; piezoresistive devices; pressure sensors; silicon; Si; down-step time response; dynamic calibration; inlet tube length; low-pressure piezoresistive sensors; low-range Si pressure sensors; pressure drop; pressure measurements; sensors frequency response; standing wave generation; Calibration; Electric shock; Frequency response; Piezoresistance; Pipelines; Pressure measurement; Pulse shaping methods; Resonant frequency; Shape; Silicon;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2002.808030

Filename

1177937