Title :
The Simulation of damage tracks in silicon
Author :
Messenger, Scott R. ; Burke, Edward A. ; Xapsos, Michael A. ; Summers, Geoffrey P. ; Walters, R.J.
Author_Institution :
SFA Inc., Largo, MD, USA
Abstract :
We describe an analytical model for deriving heavy ion damage tracks using nonionizing energy loss (NIEL) and range-energy relations. NIEL is directly calculated for heavy ions based upon screened Coulomb potentials in the nonrelativistic limit and the projected range algorithm (PRAL) is used to obtain the range relationship. Examples of damage track calculations are given for incident ions on silicon.
Keywords :
Monte Carlo methods; electric potential; ion beam effects; particle tracks; silicon; Monte Carlo simulation; Ziegler-Biersack-Littmark screened potential; displacement damage; heavy ion damage tracks; nonionizing energy loss; nonrelativistic limit; nuclear stopping power; projected range algorithm; range-energy relations; screened Coulomb potentials; silicon; Analytical models; Energy loss; Equations; Ion implantation; Laboratories; Monte Carlo methods; NASA; Particle tracking; Silicon; Target tracking; Displacement damage; NIEL; ZBL; Ziegler–Biersack–Littmark; nonionizing energy loss; nuclear stopping power; screened potential;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.835094
