DocumentCode
1139995
Title
The Simulation of damage tracks in silicon
Author
Messenger, Scott R. ; Burke, Edward A. ; Xapsos, Michael A. ; Summers, Geoffrey P. ; Walters, R.J.
Author_Institution
SFA Inc., Largo, MD, USA
Volume
51
Issue
5
fYear
2004
Firstpage
2846
Lastpage
2850
Abstract
We describe an analytical model for deriving heavy ion damage tracks using nonionizing energy loss (NIEL) and range-energy relations. NIEL is directly calculated for heavy ions based upon screened Coulomb potentials in the nonrelativistic limit and the projected range algorithm (PRAL) is used to obtain the range relationship. Examples of damage track calculations are given for incident ions on silicon.
Keywords
Monte Carlo methods; electric potential; ion beam effects; particle tracks; silicon; Monte Carlo simulation; Ziegler-Biersack-Littmark screened potential; displacement damage; heavy ion damage tracks; nonionizing energy loss; nonrelativistic limit; nuclear stopping power; projected range algorithm; range-energy relations; screened Coulomb potentials; silicon; Analytical models; Energy loss; Equations; Ion implantation; Laboratories; Monte Carlo methods; NASA; Particle tracking; Silicon; Target tracking; Displacement damage; NIEL; ZBL; Ziegler–Biersack–Littmark; nonionizing energy loss; nuclear stopping power; screened potential;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.835094
Filename
1344427
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