DocumentCode :
114005
Title :
Analysis of leakage feedback technique
Author :
Lorenzo, Rohit ; Chaudhury, Santanu
Author_Institution :
Electr. Eng., NIT Silchar, Silchar, India
fYear :
2014
fDate :
16-17 Jan. 2014
Firstpage :
1
Lastpage :
4
Abstract :
Leakage power consumption has become serious concern for circuit designers. It is expected that leakage power will dominate the total power dissipation in future VLSI circuits. We here propose a new design named “NMOS leakage feedback” which reduces leakage current while saving exact logic state. The circuit technique includes addition of NMOS helper transistors to both pull-up and pull-down paths in order to reduce leakage current without affecting the other parameters of the circuit. Based on simulation with inverter chain using 32nm Berkeley predictive technology model, NMOS leakage feedback approach achieves less area, power and delay over leakage feedback approaches with proper W/L ratio.
Keywords :
CMOS logic circuits; circuit feedback; integrated circuit design; leakage currents; Berkeley predictive technology model; NMOS helper transistor; NMOS leakage feedback; VLSI circuits; circuit designer; exact logic state; inverter chain; leakage current reduction; leakage feedback technique; leakage power consumption; pull-down path; pull-up path; size 32 nm; Delays; Integrated circuit modeling; Leakage currents; MOS devices; Switching circuits; Threshold voltage; Transistors; leakage power dissipation; sleep transistor; sub threshold current and transistor stacking;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Communication and Instrumentation (ICECI), 2014 International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4799-3982-4
Type :
conf
DOI :
10.1109/ICECI.2014.6767386
Filename :
6767386
Link To Document :
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