DocumentCode :
1140052
Title :
New Monte Carlo calculations of charged particle track-structure in silicon
Author :
Emfietzoglou, D. ; Akkerman, A. ; Barak, J.
Author_Institution :
Dept. of Med. Phys., Univ. of Ioannina Med. Sch., Greece
Volume :
51
Issue :
5
fYear :
2004
Firstpage :
2872
Lastpage :
2879
Abstract :
New extended calculations of the charged particles track-structure in silicon are presented. They are based on an improved dielectric response model and on detailed secondary electron transport simulations. The results are useful for calculating the restricted LET values as well as the prompt retarding electrical field resulting from charge separation.
Keywords :
Monte Carlo methods; dosimetry; electric field effects; electron beam effects; electron transport theory; energy loss of particles; ion beam effects; particle tracks; silicon; Monte Carlo calculations; Si; charge separation; charged particle track-structure calculation; dielectric response model; dose radial distribution; energy loss distribution; inelastic atomic ion scattering; ion-induced prompt electric field; prompt retarding electrical field; restricted linear energy transfer value; secondary electron transport simulations; silicon; straggling; Atomic measurements; Dielectrics; Electrons; Energy exchange; Energy loss; Helium; Monte Carlo methods; Particle scattering; Particle tracking; Silicon; Dielectric response theory; dose radial distribution; inelastic atomic ion scattering; ion-induced prompt electric field; straggling;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2004.835061
Filename :
1344431
Link To Document :
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