New Monte Carlo calculations of charged particle track-structure in silicon

Author

Emfietzoglou, D. ; Akkerman, A. ; Barak, J.

Author_Institution

Dept. of Med. Phys., Univ. of Ioannina Med. Sch., Greece

Volume

51

Issue

5

fYear

2004

Firstpage

2872

Lastpage

2879

Abstract

New extended calculations of the charged particles track-structure in silicon are presented. They are based on an improved dielectric response model and on detailed secondary electron transport simulations. The results are useful for calculating the restricted LET values as well as the prompt retarding electrical field resulting from charge separation.

Keywords

Monte Carlo methods; dosimetry; electric field effects; electron beam effects; electron transport theory; energy loss of particles; ion beam effects; particle tracks; silicon; Monte Carlo calculations; Si; charge separation; charged particle track-structure calculation; dielectric response model; dose radial distribution; energy loss distribution; inelastic atomic ion scattering; ion-induced prompt electric field; prompt retarding electrical field; restricted linear energy transfer value; secondary electron transport simulations; silicon; straggling; Atomic measurements; Dielectrics; Electrons; Energy exchange; Energy loss; Helium; Monte Carlo methods; Particle scattering; Particle tracking; Silicon; Dielectric response theory; dose radial distribution; inelastic atomic ion scattering; ion-induced prompt electric field; straggling;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.835061

Filename

1344431