Title :
Effect of switching from high to low dose rate on linear bipolar technology radiation response
Author :
Boch, J. ; Saigné, F. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Ducret, S. ; Dusseau, L. ; David, J.P. ; Fesquet, J. ; Gasiot, J. ; Ecoffet, R.
Author_Institution :
Univ. de Reims, France
Abstract :
The degradation of discrete and integrated-circuit bipolar technologies irradiated at High Dose Rate (HDR) and then switched to Low Dose Rates (LDR) is studied. It is shown that the degradation rate of switched devices is equal to that found at low dose rates for all the tested devices.
Keywords :
bipolar integrated circuits; bipolar transistors; dosimetry; radiation effects; switching; bipolar transistor; degradation rate; discrete bipolar technology; high to low dose rate; integrated-circuit bipolar technologies; linear bipolar technology; radiation response; switched devices; switching effects; Charge carriers; Degradation; Hydrogen; Impurities; Ionizing radiation; Protons; Silicon; Space technology; Switches; Testing; Bipolar; IC; device characterization; dose rate; switching experiment; total dose; transistor;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.835047
