Title :
Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs
Author :
Boch, J. ; Saigne, F. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Cizmarik, R. ; Zander, D.
Author_Institution :
Univ. de Reims, France
Abstract :
The effect of high temperature irradiations has been investigated on four types of commercial linear bipolar integrated circuits (ICs) at eight temperatures ranging from 25°C to 150°C for different total doses at a given dose rate. In agreement with results obtained for individual bipolar transistors, the results show that an optimum irradiation temperature exists that leads to a maximum amount of degradation. Results are compared to low dose rate (LDR) irradiations for ICs with npn and pnp input transistors.
Keywords :
bipolar analogue integrated circuits; bipolar transistors; dosimetry; radiation effects; 25 to 150 C; bipolar integrated circuits; bipolar transistors; commercial linear bipolar IC; elevated temperature irradiation; high dose rate; high temperature irradiations; low dose rate irradiations; npn input transistors; pnp input transistors; Bipolar integrated circuits; Bipolar transistors; Degradation; Helium; Ionizing radiation; Protons; Space charge; Spontaneous emission; Temperature distribution; Testing; Dose rate; IC; elevated temperature irradiation; integrated circuit; total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.835055
