Title :
14 MeV neutron-induced SEU in SRAM devices
Author :
Flament, O. ; Baggio, J. ; D´hose, C. ; Gasiot, G. ; Leray, J.L.
Author_Institution :
CEA-DAM/DIF, Bruyeres le Chatel, France
Abstract :
In this paper we explore the sensitivity of commercial static random-access memory devices to 14 MeV neutrons. The effects on bulk technologies are investigated as a function of supply voltage and angle of incidence. Monte Carlo simulations of nuclear interactions with device architecture are used for comparison with experimental data. This simulation analysis allows us to determine the key parameters of the device sensitivity as a function of the technology integration.
Keywords :
Monte Carlo methods; SRAM chips; neutron effects; Monte Carlo simulations; SRAM devices; angle of incidence; bulk technologies; commercial static random-access memory devices; neutron irradiations; neutron-induced SEU; nuclear interactions; sensitivity; simulation analysis; soft errors; supply voltage; Analytical models; CMOS technology; Data analysis; Life estimation; Neutrons; Power measurement; Power supplies; Random access memory; Single event upset; Voltage; Bulk SRAM; Monte Carlo simulation; neutron irradiations; soft errors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.835073
