Title :
Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
Author :
Ida, Minoru ; Kurishima, Kenji ; Watanabe, Noriyuki
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
Describes 150-nm-thick collector InP-based double heterojunction bipolar transistors with two types of thin pseudomorphic bases for achieving high f/sub T/ and f/sub max/. The collector current blocking is suppressed by the compositionally step-graded collector structure even at J/sub C/ of over 1000 kA/cm/sup 2/ with practical breakdown characteristics. An HBT with a 20-nm-thick base achieves a record f/sub T/ of 351 GHz at high J/sub C/ of 667 kA/cm/sup 2/, and a 30-nm-base HBT achieves a high value of 329 GHz for both f/sub T/ and f/sub max/. An equivalent circuit analysis suggests that the extremely small carrier-transit-delay contributes to the ultrahigh f/sub T/.
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device reliability; 150 nm; 20 nm; 30 nm; 329 GHz; 351 GHz; HBT; InP-InGaAs; breakdown characteristics; carrier-transit-delay; collector current blocking; compositionally step-graded collector structure; double heterojunction bipolar transistors; equivalent circuit analysis; pseudomorphic base; Doping; Double heterojunction bipolar transistors; Electric breakdown; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Lattices; Photonics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.806300
