Title :
High-performance In/sub 0.53/Ga/sub 0.47/As thermophotovoltaic devices grown by solid source molecular beam epitaxy
Author :
Hudait, M.K. ; Andre, C.L. ; Kwon, O. ; Palmisiano, M.N. ; Ringel, S.A.
Author_Institution :
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
In/sub 0.53/Ga/sub 0.47/As-based monolithic interconnected modules (MIMs) of thermophotovoltaic (TPV) devices lattice-matched to InP were grown by solid source molecular beam epitaxy. The MIM device consisted of ten individual In/sub 0.53/Ga/sub 0.47/As TPV cells connected in series on an InP substrate. An open-circuit voltage (V/sub oc/) of 4.82 V, short-circuit current density (J/sub sc/) of 1.03 A/cm/sup 2/ and fill factor of /spl sim/73% were achieved for a ten-junction MIM with a bandgap of 0.74 eV under high intensity white light illumination. Device performance uniformity was better than 1.5% across a full 2-in InP wafer. The V/sub oc/ and J/sub sc/ values are the highest yet reported for 0.74-eV band gap n-p-n MIM devices.
Keywords :
current density; energy gap; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; thermophotovoltaic cells; 0.74 eV; 4.82 V; In/sub 0.53/Ga/sub 0.47/As; TPV cells; bandgap; device performance uniformity; fill factor; monolithic interconnected modules; open-circuit voltage; short-circuit current density; solid source molecular beam epitaxy; thermophotovoltaic devices; white light illumination; Epitaxial growth; Indium gallium arsenide; Indium phosphide; MIM devices; Molecular beam epitaxial growth; Monitoring; Photonic band gap; Solids; Substrates; Temperature control;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.806295
