DocumentCode
1140200
Title
Performance of broad-band microwave-biased extrinsic photoconductive detectors at 10.6 µ
Author
Sun, C. ; Walsh, T.E.
Author_Institution
RCA Electronic Components, David Sarnoff Research Center, Princeton, NJ, USA
Volume
6
Issue
7
fYear
1970
fDate
7/1/1970 12:00:00 AM
Firstpage
450
Lastpage
457
Abstract
An analysis of the photoconductive gain-bandwidth product and SNR is presented, which allows a comparison of microwave-biased and dc-biased extrinsic detectors. The results of an experimental comparison using mercury-doped germanium at 10.6 μ are described. For equal bandwidth of 70 MHz, the measured gain and detectivity were better by a factor of 35 for microwave biasing compared to dc biasing.
Keywords
Bandwidth; Capacitance; Conductors; Germanium; Impedance; Infrared detectors; Microwave amplifiers; Photoconducting materials; Photoconductivity; Sun;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1970.1076502
Filename
1076502
Link To Document