Improvement of the Efficiency of InGaN–GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process

This study demonstrated the enhancement of the light output power of InGaN-GaN multiple quantum-well light-emitting diodes (LEDs) that are grown with a pulsed-trimethylindium (pulsed-TMIn) flow process by metal-organic vapor-phase epitaxy. At an injection current of 20 mA, the output power of the pulsed-TMIn treated LEDs was improved by 16% as compared to that of the conventional LEDs. In addition, a minor droop (versus injection current) in terms of external quantum efficiency was also observed in the pulsed-TMIn treated LEDs as compared to conventional LEDs. This improvement could be attributed to the fact that the significant carrier localization effect in the pulsed-TMIn treated LEDs can lead to higher recombination efficiency. This contention is perhaps tentatively evidenced by the temperature-dependent photoluminescence results in which the activation energy of the pulsed-TMIn treated LEDs was increased by 21.8% as compared to that of conventional LEDs.