• DocumentCode
    1140242
  • Title

    Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

  • Author

    Joseph, Alvin J. ; Harame, David L. ; Jagannathan, Basanth ; Coolbaugh, Doug ; Ahlgren, David ; Magerlein, John ; Lanzerotti, Louis ; Feilchenfeld, Natalie ; Onge, Stephen St ; Dunn, James ; Nowak, Edward

  • Author_Institution
    Semicond. R&D Center, IBM Microelectron. Div., Essex Junction, VT, USA
  • Volume
    93
  • Issue
    9
  • fYear
    2005
  • Firstpage
    1539
  • Lastpage
    1558
  • Abstract
    We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies that are based on the standard foundry compatible CMOS node are discussed - SiGe BiCMOS HP ("high performance") tailored to high-frequency applications, SiGe BiCMOS WL ("cost performance") tailored to wireless/storage applications, and RF-CMOS optimized for low-cost consumer applications. Future opportunities and challenges for advancement in RF technologies are described in light of CMOS and SiGe heterojunction bipolar transistor scaling. In addition, we discuss the maturity of SiGe BiCMOS by looking at the levels of integration and manufacturability.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; integrated circuit technology; radiofrequency integrated circuits; RF CMOS; RF foundry technologies; SiGe; SiGe BiCMOS HP; SiGe BiCMOS WL; communication technologies; heterojunction bipolar transistor; high-frequency applications; instrumentation application; networking applications; silicon semiconductor technologies; wireless/storage applications; BiCMOS integrated circuits; CMOS technology; Communications technology; Cost function; Foundries; Germanium silicon alloys; Heterojunction bipolar transistors; Instruments; Radio frequency; Silicon germanium; BiCMOS; RFCMOS; SiGe heterojunction bipolar transistor (HBT); communication technology;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2005.852547
  • Filename
    1495905