DocumentCode
1140255
Title
On the Potential of SiGe HBTs for Extreme Environment Electronics
Author
Cressler, John D.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
93
Issue
9
fYear
2005
Firstpage
1559
Lastpage
1582
Abstract
"Extreme environments" represents an important niche market for electronics and spans the operation of electronic components in surroundings lying outside the domain of conventional commercial, or even military, specifications. Such extreme environments would include, for instance, operation to very low temperatures (e.g., to 77 K or even 4.2 K), operation at very high temperatures (e.g., to 200°C or even 300°C), and operation in a radiation-rich environment (e.g., space). We argue that the unique bandgap-engineered features of silicon-germanium heterojunction bipolar transistors offer great potential to simultaneously satisfy all three extreme environment applications, potentially with little or no process modification, ultimately providing compelling cost advantages at the IC and system level.
Keywords
Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; SiGe; bandgap-engineered features; cryogenic temperatures; extreme environment electronics; heterojunction bipolar transistors; radiation-rich environment; very high temperatures operation; very low temperatures operation; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Consumer electronics; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Temperature; Cryogenic temperatures; extreme environments; high temperatures; radiation; silicon–germanium (SiGe); silicon–germanium heterojunction bipolar transistor (SiGe HBT);
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/JPROC.2005.852225
Filename
1495906
Link To Document