Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET)

Author

Udrea, F. ; Udugampola, U.N.K. ; Sheng, K. ; McMahon, R.A. ; Amaratunga, G.A.J. ; Narayanan, E.M.S. ; De Souza, M.M. ; Hardikar, S.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

23

Issue

12

fYear

2002

Firstpage

725

Lastpage

727

Abstract

In this letter we demonstrate experimentally a novel ultra-fast power device structure termed the double gate inversion layer emitter transistor (DG-ILET). The device is made in HV CMOS technology and its operation is based on a new physical injection mechanism previously reported and demonstrated experimentally (Udrea et al., 1996), namely the use of a MOS inversion layer as a minority carrier injector. The DG-ILET offers very fast turn-off associated with anode shorted lateral IGBT structures and low on-state voltage drop similar to standard lateral IGBTs without anode shorts. Unlike anode shorted structures, the DG-ILET does not exhibit a long, undesirable on-state snapback.

Keywords

high-speed techniques; insulated gate bipolar transistors; inversion layers; minority carriers; power transistors; HV CMOS technology; MOS inversion layer; anode shorted lateral IGBT structures; bipolar mode; double gate configuration; low on-state voltage drop; minority carrier injector; on-state snapback; physical injection mechanism; ultra-fast double gate inversion layer emitter transistor; ultra-fast power device structure; unipolar mode; very fast turn-off; Anodes; CMOS technology; Cathodes; Dielectric losses; Dielectric substrates; Insulated gate bipolar transistors; Isolation technology; MOSFETs; Silicon on insulator technology; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.805757

Filename

1177966