Interfacial defect states in HfO/sub 2/ and ZrO/sub 2/ nMOS capacitors

Author

Mudanai, S. ; Li, F. ; Samavedam, S.B. ; Tobin, P.J. ; Kang, C.S. ; Nieh, R. ; Lee, J.C. ; Register, L.F. ; Banerjee, S.K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA

Volume

23

Issue

12

fYear

2002

Firstpage

728

Lastpage

730

Abstract

A comprehensive analysis of the bump/kink observed in the experimental capacitance-voltage (C-V) curves of HfO/sub 2/ and ZrO/sub 2/ capacitors was performed using self-consistent numerical simulations. Both HfO/sub 2/ samples grown by sputter deposition and grown by metal-organic chemical vapor deposition (MOCVD) were examined. The bumps in the C-V curves were found to be consistent with an interface state centered 0.25 eV above the valence bandedge for the sputter deposited devices, and 0.30 eV above the bandedge for the MOCVD devices. Annealing of the HfO/sub 2/ devices reduced the densities of these traps, but also increased the effective oxide thickness. Similar defect states were detected for the ZrO/sub 2/ devices centered 0.25 eV above the valence bandedge.

Keywords

MOCVD; MOS capacitors; annealing; capacitance; defect states; dielectric thin films; interface states; semiconductor device models; sputter deposition; HfO/sub 2/ nMOS capacitors; MOCVD; TaN-HfO/sub 2/-Si; TaN-ZrO/sub 2/-Si; ZrO/sub 2/ nMOS capacitors; annealing; bump/kink; capacitance-voltage curves; effective oxide thickness; high-k dielectrics; interfacial defect states; self-consistent numerical simulations; sputter deposition; trap densities; valence bandedge; Annealing; Capacitance-voltage characteristics; Capacitors; Chemical vapor deposition; Hafnium oxide; Interface states; MOCVD; Numerical simulation; Performance analysis; Sputtering;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.805753

Filename

1177967