DocumentCode
1140383
Title
High-frequency on-chip inductance model
Author
Sim, Sang-Pil ; Lee, Kwyro ; Yang, Cary Y.
Author_Institution
Microelectron. Lab., Santa Clara Univ., Taejon, South Korea
Volume
23
Issue
12
fYear
2002
Firstpage
740
Lastpage
742
Abstract
The effect of random signal lines on the on-chip inductance is quantitatively investigated, using an S-parameter-based methodology and a full wave solver, leading to an empirical model for high-frequency inductance. The results clearly indicate that the random signal lines as well as designated ground lines provide return paths for gigahertz-frequency signals. In particular, quasi TEM-wave-like propagation mode is observed above 10 GHz, revealing a unique relationship between capacitance and inductance of the signal line. Incorporating the random capacitive coupling effect, our frequency-dependent RLC model is confirmed to be valid up to 100 GHz.
Keywords
S-parameters; inductance; integrated circuit interconnections; integrated circuit modelling; 10 to 100 GHz; S-parameter; capacitance; frequency-dependent RLC model; full wave solver; ground line; high-frequency on-chip inductance model; integrated circuit interconnection; quasi-TEM wave propagation mode; random capacitive coupling effect; random signal line; Capacitance; Coupling circuits; Frequency; Inductance; Integrated circuit interconnections; Laboratories; Microelectronics; Signal design; Testing; Wires;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2002.806297
Filename
1177971
Link To Document