• DocumentCode
    1140383
  • Title

    High-frequency on-chip inductance model

  • Author

    Sim, Sang-Pil ; Lee, Kwyro ; Yang, Cary Y.

  • Author_Institution
    Microelectron. Lab., Santa Clara Univ., Taejon, South Korea
  • Volume
    23
  • Issue
    12
  • fYear
    2002
  • Firstpage
    740
  • Lastpage
    742
  • Abstract
    The effect of random signal lines on the on-chip inductance is quantitatively investigated, using an S-parameter-based methodology and a full wave solver, leading to an empirical model for high-frequency inductance. The results clearly indicate that the random signal lines as well as designated ground lines provide return paths for gigahertz-frequency signals. In particular, quasi TEM-wave-like propagation mode is observed above 10 GHz, revealing a unique relationship between capacitance and inductance of the signal line. Incorporating the random capacitive coupling effect, our frequency-dependent RLC model is confirmed to be valid up to 100 GHz.
  • Keywords
    S-parameters; inductance; integrated circuit interconnections; integrated circuit modelling; 10 to 100 GHz; S-parameter; capacitance; frequency-dependent RLC model; full wave solver; ground line; high-frequency on-chip inductance model; integrated circuit interconnection; quasi-TEM wave propagation mode; random capacitive coupling effect; random signal line; Capacitance; Coupling circuits; Frequency; Inductance; Integrated circuit interconnections; Laboratories; Microelectronics; Signal design; Testing; Wires;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2002.806297
  • Filename
    1177971