Highly reliable ferroelectric memories using BLT thin films and robust integration schemes

Author

Yang, B. ; Kang, Y.M. ; Lee, S.S. ; Noh, K.H. ; Lee, S.W. ; Kim, N.K. ; Kweon, S.Y. ; Yeom, S.J. ; Park, Y.J.

Author_Institution

Dept. of Mater. Sci. & Eng., Kumoh Nat. Inst. of Technol., Kyongsangbuk-Do, South Korea

Volume

23

Issue

12

fYear

2002

Firstpage

743

Lastpage

745

Abstract

We report on highly reliable characteristics of 1-Mb ferroelectric memories based on 0.35-μm CMOS technology ensuring ten-year retention and imprint at 175/spl deg/C, which have been successfully developed for the first time. This excellent reliability resulted from newly developed [Bi/sub 1-x/La/sub x/]₄Ti₃O/sub 12/ (BLT) ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen.

Keywords

CMOS memory circuits; bismuth compounds; ferroelectric storage; ferroelectric thin films; high-temperature electronics; integrated circuit reliability; lanthanum compounds; 0.35 micron; 1 Mbit; 175 degC; BLT thin film; CMOS technology; [BiLa]/sub 4/Ti/sub 3/O/sub 12/; ferroelectric memory; high temperature reliability; impurities; process integration; Bismuth; CMOS technology; Degradation; Ferroelectric films; Ferroelectric materials; Impurities; Moisture; Robustness; Temperature; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.806299

Filename

1177972