A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

Author

Zhang, Gang ; Cressler, John D. ; Niu, Guofu ; Joseph, Alvin J.

Author_Institution

Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA

Volume

49

Issue

12

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2151

Lastpage

2156

Abstract

A new mixed-mode base current degradation mechanism is identified in bipolar transistors for the first time, which, at room temperature, induces a large I_B leakage current only after simultaneous application of both high J_C and high V_CB. This new mechanism differs fundamentally from well-known I_B degradation mechanisms such as the reverse EB voltage stress, high forward current stress and damage due to ionizing radiation. Extensive measurements and two-dimensional (2-D) simulations have been used to help understand the device physics associated with this new degradation mechanism.

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; impact ionisation; leakage currents; semiconductor device measurement; semiconductor device models; semiconductor device reliability; semiconductor materials; silicon; Si; SiGe; base current degradation mechanism; bipolar transistors; degradation mechanisms; device measurements; device physics; leakage current; mixed-mode reliability degradation mechanism; room temperature; two-dimensional simulations; Bipolar transistors; Degradation; Germanium silicon alloys; Ionizing radiation; Leakage current; Silicon germanium; Stress; Temperature; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.805566

Filename

1177979