DocumentCode :
1140618
Title :
High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide
Author :
Inaba, Satoshi ; Okano, Kimitoshi ; Matsuda, Satoshi ; Fujiwara, Makoto ; Hokazono, Akira ; Adachi, Kanna ; Ohuchi, Kazuya ; Suto, Hiroyuki ; Fukui, Hironobu ; Shimizu, Takashi ; Mori, Shinji ; Oguma, Hideki ; Murakoshi, Atsushi ; Itani, Takaharu ; Iinuma
Author_Institution :
SoC Reseach & Dev. Center, Toshiba Corp. Semicond. Co., Yokohama, Japan
Volume :
49
Issue :
12
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
2263
Lastpage :
2270
Abstract :
The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated to study the feasibility of higher performance operation. Nitrogen concentration in gate oxynitride was optimized to reduce gate current Ig and to prevent boron penetration in the pFET. The thermal budget in the middle of the line (MOL) process was reduced enough to realize shallower junction depth in the S/D extension regions and to suppress gate poly-Si depletion. Finally, the current drives of 676 μA/μm in nFET and 272 μA/μm in pFET at Vdd=0.85 V (at Ioff=100 nA/μm) were achieved and they are the best values for 35 nm gate length CMOS reported to date.
Keywords :
CMOS integrated circuits; MOSFET; boron; dielectric thin films; doping profiles; integrated circuit technology; leakage currents; nanoelectronics; nickel compounds; nitrogen; 0.85 V; 35 nm; B penetration prevention; CMOS devices; MOL process; N concentration; NO oxynitride gate dielectric; Ni salicide; NiSi-SiON-Si; channel profile design; gate leakage current; gate poly-Si depletion suppression; middle of the line process; shallow junction formation; source/drain extension regions; thermal budget reduction; Associate members; Boron; Dielectric devices; MOSFET circuits; Manufacturing processes; Nickel; Nitrogen; Semiconductor device manufacture; Silicon; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.805575
Filename :
1177993
Link To Document :
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