Title :
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
Author :
Kuo, D.S. ; Chang, Shoou-Jinn ; Ko, T.K. ; Shen, C.F. ; Hon, S.J. ; Hung, S.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fDate :
4/15/2009 12:00:00 AM
Abstract :
We propose a simple defect-selective wet etching method to form oblique sidewalls for GaN-based epitaxial layers with phosphoric acid. Using the same defect-selective wet etching, we also prepared GaN-based light-emitting diodes (LEDs) with undercut sidewalls. Compared with conventional LEDs with vertical sidewalls, it was found that output intensity of the LEDs prepared by defect-selective wet etching was 30% higher.
Keywords :
III-V semiconductors; etching; gallium compounds; light emitting diodes; semiconductor epitaxial layers; wide band gap semiconductors; GaN; defect-selective wet etching method; epitaxial layers; light-emitting diodes; nitride-based LED; oblique sidewalls; phosphoric acid etching; undercut sidewalls; GaN; light-emitting diode (LED); phosphoric acid etching; undercut;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2014078
