Title :
The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors
Author :
Ren, Changhong ; Cai, Jun ; Liang, Yung C. ; Ong, Pick Hong ; Balasubramanian, N. ; Sin, Johnny K O
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Kent Ridge, Singapore
fDate :
12/1/2002 12:00:00 AM
Abstract :
A new partial silicon-on-insulator (SOI) formation technology and the associated RF LDMOSFET device structure on a silicon bulk substrate are proposed in this paper. The same technology can also be applied to enhance the quality factor of the integrated on-chip microinductors. The proposed technology is able to reduce both drain/substrate parasitics and leakage current for devices fabricated on bulk substrates. At the same time, the approach overcomes the thermal problem encountered by devices fabricated on full-SOI substrates. To demonstrate the technology, both partial-SOI LDMOSFET and microinductor devices were fabricated on a bulk wafer with their RF performance verified by laboratory measurements.
Keywords :
CMOS integrated circuits; Q-factor; capacitance; inductors; leakage currents; oxidation; power MOSFET; power integrated circuits; radiofrequency integrated circuits; silicon-on-insulator; RF LDMOSFET device structure; RF performance; RFIC; Si; Si bulk substrate; drain/substrate parasitics reduction; leakage current reduction; on-chip microinductors; partial SOI formation technology; power LDMOSFET devices; quality factor enhancement; Degradation; Microelectronics; Parasitic capacitance; Q factor; Radio frequency; Radiofrequency amplifiers; Silicon compounds; Silicon on insulator technology; System-on-a-chip; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.807459
