Title :
Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs
Author :
Chang, Leland ; Yang, Kevin J. ; Yeo, Yee-Chia ; Polishchuk, Igor ; King, Tsu-Jae ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of body thickness scaling and channel crystallographic orientation are studied. The impact of threshold voltage control solutions, including doped channel and asymmetric double-gate structures is also investigated. Future gate dielectric thickness scaling and the use of high-κ gate dielectrics are discussed.
Keywords :
MOSFET; dielectric thin films; leakage currents; silicon; tunnelling; voltage control; asymmetric double-gate structures; body thickness scaling; channel crystallographic orientation; channel quantum confinement; direct-tunneling gate leakage current; doped channel structures; double-gate MOSFETs; energy quantization; gate dielectric thickness scaling; gate tunneling current; high-k gate dielectrics; threshold voltage control; ultrathin body MOSFETs; vertical electric field reduction; wavefunction penetration; Crystallography; Dielectrics; Gate leakage; Leakage current; MOSFETs; Potential well; Quantization; Threshold voltage; Tunneling; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.807446
