DocumentCode :
1140731
Title :
GaSb-Based Type I Quantum-Well Light-Emitting Diode Addressable Array Operated at Wavelengths Up to 3.66 
m
Author :
Jung, Seungyong ; Suchalkin, Sergey ; Kipshidze, Gela ; Westerfeld, David ; Snyder, Donald ; Johnson, Matthew ; Belenky, Gregory
Author_Institution :
Electr. & Comput. Eng. Dept., SUNY at Stony Brook, Stony Brook, NY, USA
Volume :
21
Issue :
15
fYear :
2009
Firstpage :
1087
Lastpage :
1089
Abstract :
Type I GaSb-based light-emitting diodes (LEDs) have been demonstrated while operating at room temperature at wavelengths up to 3.66 mum with approximately 200 muW of quasi- continuous-wave optical power. A mid-infrared 6 times 6 addressable array of Type I LEDs was also demonstrated.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; quantum well devices; GaSb; infrared scene projection; mid-infrared light-emitting diode; quantum-well light-emitting diode addressable array; temperature 293 K to 298 K; Brightness; Chemical industry; Etching; Layout; Light emitting diodes; Optical arrays; Optical sensors; Quantum wells; Semiconductor laser arrays; Temperature; Infrared (IR) scene projection; mid-infrared (mid-IR) light-emitting diode (LED); type I;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2022843
Filename :
5166603
Link To Document :
