Title :
Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0.9)
Author :
Ng, B.K. ; David, J.P.R. ; Rees, G.J. ; Tozer, R.C. ; Hopkinson, M. ; Airey, R.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
fDate :
12/1/2002 12:00:00 AM
Abstract :
Measurements carried out on thick AlxGa1-xAs (x < 0.9) diodes showed that the ionization coefficients of AlxGa1-xAs become widely different when x ≥ 0.63 and are virtually independent of x for x ≥ 0.72. A strong dead space effect is also observed in thick AlxGa1-xAs structures with x ≥ 0.6. The breakdown voltage is found to increase at a slower rate with x when x > 0.63.
Keywords :
III-V semiconductors; aluminium compounds; avalanche breakdown; gallium arsenide; impact ionisation; p-i-n diodes; semiconductor device breakdown; semiconductor device reliability; AlxGa1-xAs; avalanche breakdown; avalanche multiplication; breakdown voltage; dead space effect; impact ionization; ionization coefficients; p i n diodes; Aluminum; Avalanche breakdown; Capacitance; Charge carrier processes; Gallium arsenide; Impact ionization; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.805570
