• DocumentCode
    1140754
  • Title

    Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0.9)

  • Author

    Ng, B.K. ; David, J.P.R. ; Rees, G.J. ; Tozer, R.C. ; Hopkinson, M. ; Airey, R.J.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
  • Volume
    49
  • Issue
    12
  • fYear
    2002
  • fDate
    12/1/2002 12:00:00 AM
  • Firstpage
    2349
  • Lastpage
    2351
  • Abstract
    Measurements carried out on thick AlxGa1-xAs (x < 0.9) diodes showed that the ionization coefficients of AlxGa1-xAs become widely different when x ≥ 0.63 and are virtually independent of x for x ≥ 0.72. A strong dead space effect is also observed in thick AlxGa1-xAs structures with x ≥ 0.6. The breakdown voltage is found to increase at a slower rate with x when x > 0.63.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche breakdown; gallium arsenide; impact ionisation; p-i-n diodes; semiconductor device breakdown; semiconductor device reliability; AlxGa1-xAs; avalanche breakdown; avalanche multiplication; breakdown voltage; dead space effect; impact ionization; ionization coefficients; p i n diodes; Aluminum; Avalanche breakdown; Capacitance; Charge carrier processes; Gallium arsenide; Impact ionization; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.805570
  • Filename
    1178005
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1140754