DocumentCode :
1140774
Title :
A silicon thermal astable multivibrator for flow and temperature sensing
Author :
Gamage, Sisira K. ; Okulan, Nihat ; Henderson, H.Thurman
Author_Institution :
Dept. of Electr., Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA
Volume :
49
Issue :
12
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
2355
Lastpage :
2358
Abstract :
Here we report for the first time on a thermal astable multivibrator modality made possible with a silicon bulk micromachined flow sensor. The sensor shows an oscillatory response for constant current input. Further, the frequency of oscillation is modulated with the temperature of the sensing element, realizing the performance of a thermal multivibrator. The temperature variation is induced via air flow and a change in frequency of 5 Hz is observed for air flow velocities in the range of 0-21 m/s. The low output frequencies (20-25 Hz) observed clearly suggest that the oscillations are purely thermal in origin. In contrast, others have reported many electronic switching effects obtained by the various physical mechanisms via negative differential resistance regimes, which typically give rise to much higher frequencies of oscillations in the range of kHz-GHz.
Keywords :
elemental semiconductors; flow measurement; micromachining; microsensors; multivibrators; negative resistance devices; silicon; temperature sensors; 0 to 21 m/s; 20 to 25 Hz; Si; air flow velocities; electronic switching effects; flow sensing; micromachined flow sensor; negative differential resistance regimes; oscillatory response; temperature sensing; temperature variation; thermal astable multivibrator; Charge carrier processes; Conductivity; Electron mobility; Frequency; P-i-n diodes; Semiconductor diodes; Sensor phenomena and characterization; Silicon; Temperature sensors; Thermal sensors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.805577
Filename :
1178007
Link To Document :
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