DocumentCode
1140774
Title
A silicon thermal astable multivibrator for flow and temperature sensing
Author
Gamage, Sisira K. ; Okulan, Nihat ; Henderson, H.Thurman
Author_Institution
Dept. of Electr., Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA
Volume
49
Issue
12
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
2355
Lastpage
2358
Abstract
Here we report for the first time on a thermal astable multivibrator modality made possible with a silicon bulk micromachined flow sensor. The sensor shows an oscillatory response for constant current input. Further, the frequency of oscillation is modulated with the temperature of the sensing element, realizing the performance of a thermal multivibrator. The temperature variation is induced via air flow and a change in frequency of 5 Hz is observed for air flow velocities in the range of 0-21 m/s. The low output frequencies (20-25 Hz) observed clearly suggest that the oscillations are purely thermal in origin. In contrast, others have reported many electronic switching effects obtained by the various physical mechanisms via negative differential resistance regimes, which typically give rise to much higher frequencies of oscillations in the range of kHz-GHz.
Keywords
elemental semiconductors; flow measurement; micromachining; microsensors; multivibrators; negative resistance devices; silicon; temperature sensors; 0 to 21 m/s; 20 to 25 Hz; Si; air flow velocities; electronic switching effects; flow sensing; micromachined flow sensor; negative differential resistance regimes; oscillatory response; temperature sensing; temperature variation; thermal astable multivibrator; Charge carrier processes; Conductivity; Electron mobility; Frequency; P-i-n diodes; Semiconductor diodes; Sensor phenomena and characterization; Silicon; Temperature sensors; Thermal sensors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2002.805577
Filename
1178007
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