Title :
A new model for avalanche build-up of carriers in a SAGCM avalanche photodiode
Author :
Das, N.R. ; Deen, M.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
fDate :
12/1/2002 12:00:00 AM
Abstract :
A new model for the avalanche build-up of carriers in an avalanche photodiode (APD) including the dead-space effect has been developed and used to study the frequency response of a resonant-cavity-enhanced (RCE) separate absorption, grading, charge, and multiplication (SAGCM) APD. In this model, the carriers are characterized by their energy and position in the region of multiplication. The excess energy of the carriers above threshold are assumed to be equally distributed among the carriers after impact ionization. The results are demonstrated with a In0.1Ga0.9As/Al0.2Ga0.8As RCE APD and good agreement was obtained from comparisons with the published experimental data for gain-bias and bandwidth-gain plots.
Keywords :
III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; frequency response; gallium arsenide; impact ionisation; indium compounds; semiconductor device models; In0.1Ga0.9As-Al0.2Ga0.8As; In0.1Ga0.9As/Al0.2Ga0.8As; RCE; SAGCM; avalanche build-up; avalanche photodiode; bandwidth-gain plots; carrier build-up; dead-space effect; excess energy; frequency response; gain-bias plots; impact ionization; resonant-cavity-enhanced device; separate absorption grading charge and multiplication; Absorption; Avalanche photodiodes; BiCMOS integrated circuits; CMOS technology; Epitaxial growth; Fabrication; Resonance; Semiconductor process modeling; Silicon compounds; System-on-a-chip;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.805605
