A 0.25-μm 20-dBm 2.4-GHz CMOS power amplifier with an integrated diode linearizer

Author

Cheng-Chi Yen ; Huey-Ru Chuang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

13

Issue

2

fYear

2003

Firstpage

45

Lastpage

47

Abstract

A 2.4-GHz CMOS power amplifier (PA) with an output power 20 dBm using 0.25-μm 1P5M standard CMOS process is presented. The PA uses an integrated diode connected NMOS transistor as a diode linearizer. It is believed that this is the first reported use of the diode linearization technique in CMOS PA design. It shows effective improvement in linearity from gain compression and ACPR measured results. Measurements are performed by using an FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28%. The obtained PA performances demonstrate the standard CMOS process potential for medium power RF amplification at 2.4 GHz wireless communication band.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; field effect MMIC; linearisation techniques; system-on-chip; 0.25 micron; 2.4 GHz; 28 percent; ACPR; CMOS power amplifier; gain compression; integrated diode linearizer; output power; power-added efficiency; system-on-a-chip; CMOS process; CMOS technology; Diodes; Gain measurement; Linearity; Linearization techniques; MOSFETs; Performance evaluation; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.808722

Filename

1178027