DocumentCode :
1141126
Title :
Synthesis and bulk acoustic wave properties on the dual mode frequency shift of solidly mounted resonators
Author :
Chung, Chung-Jen ; Chen, Ying-Chung ; Cheng, Chien-Chuan ; Kao, Kuo-Sheng
Author_Institution :
Nat. Sun Yat-Sen Univ., Kaohsiung
Volume :
55
Issue :
4
fYear :
2008
fDate :
4/1/2008 12:00:00 AM
Firstpage :
857
Lastpage :
864
Abstract :
This study focused on the fabrication and the theoretical analysis of solidly mounted resonators (SMR) concerning dual-mode frequency responses and their frequency shift of bulk acoustic wave (BAW) resonance. For this device fabrication, RF/DC magnetron sputtering and photolithography were employed to constitute the required multilayer structure. For the theoretical analysis, the dual- mode frequency shift was characterized by the Sauerbrey´s formula, and a modified formula was carried out following the trend for the large frequency shift. In the fabrication of the SMR device, Mo/SiO2 was chosen to construct the Bragg reflector as the high/low acoustic impedance materials, respectively, and aluminum nitride (AlN) was used as a piezoelectric layer. To investigate the characteristics of BAW on the dual-mode frequency shift, the c-axis tilted angle of AlN was altered as well as the various mass loading on the SMR. Based on the experimental results, the dual-resonance frequencies showed a nonlinear decreasing trend with a linear increase of the mass loading. Therefore, a modified formula was carried out. Furthermore, the ratio of the longitudinal-resonant frequency to the shear-resonant frequency remained at a range around 1.76 despite the various c-axis tilted angles of AlN and gradual mass loading on the SMR. The electromechanical coupling coefficient, keff 2, of the shear resonance rose with the increase of the c-axis tilted angle of AlN.
Keywords :
acoustic impedance; acoustic resonators; aluminium compounds; bulk acoustic wave devices; molybdenum; multilayers; photolithography; piezoelectric materials; silicon compounds; sputter deposition; AlN; BAW resonator; Bragg reflector; Mo-SiO2; Sauerbrey formula; acoustic impedance materials; aluminum nitride; bulk acoustic wave resonance; dual-mode frequency shift; dual-resonance frequencies; electromechanical coupling coefficient; longitudinal-resonant frequency; magnetron sputtering; multilayer structure; photolithography; piezoelectric layer; shear-resonant frequency; solidly mounted resonators; Acoustic waves; Fabrication; Frequency synthesizers; Lithography; Magnetic analysis; Magnetic devices; Magnetic multilayers; Magnetic resonance; Radio frequency; Sputtering;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2008.720
Filename :
4494780
Link To Document :
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