DocumentCode
1141265
Title
In-plane transport properties of Si/Si1-xGex structure and its FET performance by computer simulation
Author
Yamada, Toshishige ; Zhou, Jing-Rong ; Miyata, H. ; Ferry, David K.
Author_Institution
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Volume
41
Issue
9
fYear
1994
fDate
9/1/1994 12:00:00 AM
Firstpage
1513
Lastpage
1522
Abstract
Transport properties of ungated Si/Si1-xGex are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering limited mobility is enhanced over bulk Si, and is found to reach 23000 cm2/Vs at 77 K and 4000 cm2/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transconductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15%
Keywords
Ge-Si alloys; Monte Carlo methods; carrier mobility; digital simulation; electronic engineering computing; elemental semiconductors; high electron mobility transistors; semiconductor device models; semiconductor junctions; silicon; 0.18 micron; 300 mS/mm; 77 to 300 K; FET performance; Si-SiGe; Si/Si1-xGex structure; computer simulation; device performance; ensemble Monte Carlo technique; field-effect-transistor; in-plane transport properties; modulation-doped FET; phonon-scattering limited mobility; quantum hydrodynamic equation method; saturation velocity; strained Si channel; transconductance; velocity overshoot; Capacitive sensors; Electrons; Epitaxial layers; FETs; Heterojunctions; Monte Carlo methods; Particle scattering; Phonons; Temperature; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.310101
Filename
310101
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