Title :
Study of an AlGaInP-Based Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure
Author :
Yen, Chih-Hung ; Liu, Yi-Jung ; Chen, Tzu-Pin ; Chen, Li-Yang ; Tsai, Tsung-Han ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan
fDate :
5/15/2009 12:00:00 AM
Abstract :
An AlGaInP-based multiquantum-well (MQW) light-emitting diode (LED) with an n-type modulation-doped (MD) structure, grown by metal-organic vapor-phase epitaxy, is fabricated and studied. Experimental results indicate that a lower turn-on voltage and dynamic resistance, higher output power, and smaller wavelength shift, as compared to a conventional undoped-MQW LED, are obtained. The studied n-type MD-MQW LED also exhibits a higher external quantum efficiency of 7.2% and a larger maximum light output power. The junction temperature of the studied MD-MQW LED also shows a 12 degC reduction, at 200 mA, as compared to a conventional one. These positive results are mainly attributed to the presence of a higher electron concentration in the MD-MQW active region.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; light emitting diodes; optical materials; quantum well devices; semiconductor quantum wells; vapour phase epitaxial growth; AlGaInP; MD-MQW active region; current 200 mA; efficiency 7.2 percent; external quantum efficiency; higher electron concentration; higher external quantum efficiency; junction temperature; light output power; light-emitting diode; metal-organic vapor-phase epitaxy; modulation-doped multiquantum-well structure; n-type MD-MQW LED structure growth; AlGaInP; light-emitting diode (LED); metal– organic chemical vapor deposition (MOCVD); modulation-doped (MD); multiple quantum-well (MQW);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2014075
