• DocumentCode
    1141298
  • Title

    All-epitaxial current- and mode-confined AlGaAs/GaAs VCSEL

  • Author

    Lu, D. ; Ahn, J. ; Deppe, D.G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
  • Volume
    40
  • Issue
    21
  • fYear
    2004
  • Firstpage
    1336
  • Lastpage
    1337
  • Abstract
    An all-epitaxial current- and mode-confining vertical-cavity surface-emitting laser is demonstrated that eliminates the need for any post-growth oxidation step. The current and optical mode are self-aligned and confined to the same lithographically defined area in an AlGaAs cavity.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor epitaxial layers; semiconductor lasers; surface emitting lasers; AlGaAs-GaAs; VCSEL; all-epitaxial current vertical-cavity surface-emitting laser; lithography; mode-confining vertical-cavity surface emitting laser; optical mode; post-growth oxidation; vertical-cavity surface-emitting laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046159
  • Filename
    1344885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1141298