DocumentCode
1141310
Title
High-quality 1.3 μm GaInNAs single quantum well lasers grown by MBE
Author
Wang, X.D. ; Wang, S.M. ; Wei, Y.-Q. ; Sadeghi, M. ; Larsson, A.
Author_Institution
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden
Volume
40
Issue
21
fYear
2004
Firstpage
1338
Lastpage
1339
Abstract
High-quality 1.3 μm GaInNAs/GaNAs single quantum well lasers grown by molecular beam epitaxy are reported. The broad area lasers show a record low threshold current density of 318 A/cm2 for a cavity length of 1 mm, a transparent current density of 84 A/cm2, and a characteristic temperature of 103 K from 8 to 70°C.
Keywords
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; 1.3 micron; 103 K; 8 to 70 degC; GaAs:Si; GaInNAs-GaNAs; GaInNAs/GaNAs single quantum well lasers; Si doped GaAs substrates; broad area lasers; cavity length; characteristic temperature; low threshold current density; molecular beam epitaxial growth; transparent current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20046557
Filename
1344886
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